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Go to Investor InformationROHM开发出业界先进的第4代低导通电阻SiC MOSFET ...:1 天前 · 全球知名半导体制造商ROHM(总部位于日本京都市)开发出1200V 第4代SiC MOSFET※1,非常适用于包括主机逆变器在内的车载动力总成系统和工业设备的电源。对于功率半导体来说,当导通电阻降低时短路耐受时间※2就会缩...
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